Single-Event Effect Hardened VDMOS Device with Hole Bypass Structure-Reference-Cited by-同舟云学术

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Single-Event Effect Hardened VDMOS Device with Hole Bypass Structure

Published:2018-12 Issue: Volume: Page:
ISSN:
Container-title:2018 10th International Conference on Communications, Circuits and Systems (ICCCAS)
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Author:

Ren Min,Hu Yufang,Lin Yuci,He Wenjing,Ma Yining,Gao Wei,Li Zehong,Zhang Bo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8765671/8768899/08769170.pdf?arnumber=8769170

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TCAD Analysis of Single-Event Burnout Hardness for an Improved CoolSiC Trench MOSFET;IEEE Transactions on Electron Devices;2024-08

2. Drain-Leakage Degradation During Single-Event Burnout Experiments in N-Channel Power VDMOS Transistors;IEEE Transactions on Electron Devices;2024-08

3. Machine learning based prediction model for single event burnout hardening design of power MOSFETs;Microelectronics Journal;2023-09

4. A SEB Hardened Trench Gate DMOS with HfO₂ Gate Dielectric and Decelerating Electric Field Layer in Parasitic NPN Base;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

5. Single-event burnout hardening of RC-IGBT with the raised N-buffer layer;Microelectronics Reliability;2022-12

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