Single-event burnout hardening of RC-IGBT with the raised N-buffer layer-Reference-Cited by-同舟云学术

Single-event burnout hardening of RC-IGBT with the raised N-buffer layer

Published:2022-12 Issue: Volume:139 Page:114808
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Zhang Xiao-Dong,Wang Ying,Bao Meng-Tian,Li Xing-ji,Yang Jian-qun,Cao Fei

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

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4. Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model;Guetarni;Microelectronics Reliability,2013

5. Failure mode of different irradiated power IGBT structures;Lorfevre,1997

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