Single-event burnout hardening of RC-IGBT with the raised N-buffer layer-Reference-Cited by-同舟云学术

Single-event burnout hardening of RC-IGBT with the raised N-buffer layer

Published:2022-12 Issue: Volume:139 Page:114808
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Zhang Xiao-Dong,Wang Ying,Bao Meng-Tian,Li Xing-ji,Yang Jian-qun,Cao Fei

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Cosmic ray ruggedness of IGBTs for hybrid vehicles;Nishida,2010

2. Single-event effects in ground-level infrastructure during extreme ground-level enhancements;Dyer;IEEE Trans. Nucl. Sci.,2020

3. Development of Monte Carlo modeling for neutron-induced failures of trench FieldStop IGBT;Foro;IEEE Trans. Nucl. Sci.,2011

4. Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model;Guetarni;Microelectronics Reliability,2013

5. Failure mode of different irradiated power IGBT structures;Lorfevre,1997

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation and Analysis of Ion Incidence on the SJ_IGBT in Radiation Environment;2023 Second International Conference on Trends in Electrical, Electronics, and Computer Engineering (TEECCON);2023-08-23

2. Explore the Effect of Different Parameters on Eliminating the Snapback of RC-IGBT with P-poly Trench-Collectors;2023 6th International Conference on Electrical Engineering and Green Energy (CEEGE);2023-06-06

3. Parameter extraction method for Cauer model considering dynamic thermal diffusion boundaries in IGBT module;Microelectronics Journal;2023-01