A 0.6 ㎛ Small Pixel for High Resolution CMOS Image Sensor with Full Well Capacity of 10,000e- by Dual Vertical Transfer Gate Technology-Reference-Cited by-同舟云学术

A 0.6 ㎛ Small Pixel for High Resolution CMOS Image Sensor with Full Well Capacity of 10,000e- by Dual Vertical Transfer Gate Technology

Published:2022-06-12 Issue: Volume: Page:
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Container-title:2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Yun Jungbin¹,Lee Seungjoon¹,Cha Seungwon¹,Kim Jihun¹,Lee Jeongho¹,Kim Hanseok¹,Lee Eungkyu¹,Kim Seonok¹,Hong Seunghan¹,Kim Hyungchae¹,Huh Jinsuk¹,Kim Sungchul¹,Kakehi Kazunori¹,Kim Jae-Ho¹,Koo June-Mo¹,Cho Eunsang¹,Jeong Heegeun¹,Park Howoo¹,Lee Kyungho¹,Ahn JungChak¹,Yim JoonSeo¹

Affiliation:

1. Samsung Electronics Co., Ltd.,Yongin-City,Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830254.pdf?arnumber=9830254

Reference5 articles.

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