Enhanced Charge Transfer Efficiency Using Ring Vertical Transfer Gates in Backside Illuminated CMOS Image Sensor-Reference-Cited by-同舟云学术

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Enhanced Charge Transfer Efficiency Using Ring Vertical Transfer Gates in Backside Illuminated CMOS Image Sensor

Published:2024-04-22 Issue: Volume: Page:1-2
ISSN:
Container-title:2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)
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Author:

Lee Yu-Chieh¹,Das Avishek²,Huang Yi³,Venkatesapandian Logeshwaran²,Liu C. W.¹

Affiliation:

1. Graduate Institute of Electronics Engineering, National Taiwan University,Taipei,Taiwan

2. Graduate School of Advanced Technology, National Taiwan University,Taipei,Taiwan

3. Graduate Institute of Photonics and Optoelectronics, National Taiwan University,Taipei,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10546337/10546338/10546447.pdf?arnumber=10546447

Reference5 articles.

1. 2018 IEEE International Solid - State Circuits Conference - (ISSCC)

2. 2022 IEEE International Solid- State Circuits Conference (ISSCC)

3. 2019 IEEE International Electron Devices Meeting (IEDM)

4. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

5. 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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