2019 IEEE International Electron Devices Meeting (IEDM)
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IEEE
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. CMOS-Compatible Low-T Processing Methods for HZO-based DRAM capacitors by E-field Cycling;2024 IEEE International Memory Workshop (IMW);2024-05-12
2. Enhanced Charge Transfer Efficiency Using Ring Vertical Transfer Gates in Backside Illuminated CMOS Image Sensor;2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA);2024-04-22
3. Superlattice effects and limitations of non-destructive measurement of advanced Si/Si(1-x)Ge(x) superlattice structures using Mueller matrix scatterometry (MMSE) and high-resolution x-ray diffraction (XRD);Metrology, Inspection, and Process Control XXXVIII;2024-04-10
4. Experimental Investigation of Polarization Switching Speed in Ferroelectric HfO2 for High-Speed and Low-Power Applications;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17
5. 1.1 A/mm ß-Ga2O3-on-SiC RF MOSFETs with 2.3 W/mm Pout and 30% PAE at 2 GHz and fT/fmax of 27.6/57 GHz;2023 International Electron Devices Meeting (IEDM);2023-12-09
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