Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window
Author:
Affiliation:
1. Rochester Institute of Technology
2. Pennsylvania State University
3. University of Stuttgart
4. GlobalFoundries Fab1 LLC & Co. KG
5. IBM Thomas J. Watson Research Center
6. IIT Kanpur
Funder
U.S. Department of Energy
Office of Science
Basic Energy Sciences
Army Research Office
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830172.pdf?arnumber=9830172
Reference8 articles.
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