Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics-Reference-Cited by-同舟云学术

Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

Published:2021-04 Issue:4 Volume:68 Page:2010-2016
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jo Hyeon-Bhin,Yun Seung-Won,Kim Jun-Gyu,Baek Ji-Min,Lee In-Geun,Kim Dae-Hyun,Kim Tae-Woo,Kim Sang-Kuk,Yun Jacob,Kim Ted,Tsutsumi Takuya,Sugiyama Hiroki,Matsuzaki Hideaki

Funder

Civil-Military Technology Cooperation Program

Institute for Information & Communication Technology Planning & Evaluation (IITP) through the Global Core Human Resource Training Support Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9385809/09318008.pdf?arnumber=9318008

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