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3. Lg = 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz;Jo;Appl Phys Express,2019
4. Lg = 19 nm In0.8Ga0.2As composite-channel HEMTs with fT = 738 GHz and fmax = 492 GHz;Jo;Int Electron Devices Meeting,2020
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