Electron induced SEU and MBU sensitivity of 20-nm planar and 16-nm FinFET SRAM-based FPGA-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Electron induced SEU and MBU sensitivity of 20-nm planar and 16-nm FinFET SRAM-based FPGA

Published:2020-10 Issue: Volume: Page:
ISSN:
Container-title:2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
language:
Short-container-title:

Author:

Augustin G.¹,Mauguet M.¹,Andrianjohany N.¹^ORCID,Sukhaseum N.¹,Chatry N.¹,Bezerra F.²

Affiliation:

1. TRAD Tests & Radiations,Labège Cedex,France,31670

2. Centre National d'Etudes Spatiales (CNES),Toulouse Cedex,France,31401

Funder

Centre National d'Etudes Spatiales

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9857595/9857677/09857681.pdf?arnumber=9857681

Reference19 articles.

1. A Method and Case Study on Identifying Physically Adjacent Multiple-Cell Upsets Using 28-nm, Interleaved and SECDED-Protected Arrays

2. SER scaling and trends in planar submicron technology nodes

3. Soft Error Rate from Planar to FinFETs On Bulk Vs SOI Processes

4. Single Event Effect prediction early in the design phase and latchup case study on ASIC

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP