415/610GHz f<sub>T</sub>/f<sub>MAX</sub> SiGe HBTs Integrated in a 45nm PDSOI BiCMOS process-Reference-Cited by-同舟云学术

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415/610GHz f_T/f_MAX SiGe HBTs Integrated in a 45nm PDSOI BiCMOS process

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Jain Vibhor¹,Pekarik John¹,Kenney Crystal¹,Holt Judson¹,Durcan Chris¹,Johnson Jeffrey B.¹,Saroop Sudesh¹,Nafari Mona¹,Ruparelia Vaibhav²,Gedela Santosh Kumar²,Sharma Prateek Kumar²,Ontalus Viorel¹,Khokale Shweta¹,Chaurasia Saloni¹,Vanukuru Venkata²,Joseph Alvin¹

Affiliation:

1. GlobalFoundries,USA

2. GlobalFoundries,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019417.pdf?arnumber=10019417

Reference20 articles.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Study of Total Dose Radiation Effects in Ka-Band Fractional-N PLLs in 45nm SiGe BiCMOS;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

2. Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits;ACS Photonics;2024-03-19

3. Analog/mmWave Circuit Demonstrations in State-of-the-Art SiGe BiCMOS Process for 5G and Optical Transceivers;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

4. Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

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