Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers-Reference-Cited by-同舟云学术

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Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers

Published:2023-10-16 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Sharma Prateek Kumar¹,Ruparelia Vaibhav¹,Sirohi Saurabh²,Raghunathan Uppili S.²,Vanukuru Venkata¹,Jain Vibhor²

Affiliation:

1. Globalfoundries,India

2. GlobalFoundries,USA

Funder

DARPA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10310176/10310665/10311051.pdf?arnumber=10311051

Reference9 articles.

1. 415/610GHz f_T/f_MAX SiGe HBTs Integrated in a 45nm PDSOI BiCMOS process

2. Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with f_T/f_max of 340/410 GHz

3. The Transimpedance Limit

4. SiGe BiCMOS technologies for high-speed and high-volume optical interconnect applications

5. Improved Signal Integrity at 64 Gbps in a 130-nm SiGe Optical Receiver With Through-Silicon Vias

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