Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz

Author:

Raghunathan U. S.1,Sirohi S.1,Ruparelia V.2,Sharma P. K.2,Ioannou D. P.3,Jain V.4,Kakara H. K.2,Gedela S.2,Vanukuru V.2,Dongmo P.1,Luce C.1,Hazbun R.1,Krishnasamy R.1,Hwang J.1,Levy M.1,Welch K.1,Liu S.1,Cucci B.1,Cole S.1,Kantarovsky J.1,Vallett A.1,McCallum-Cook I.1,Yu M.1,Phelps R.1,Divergilio A.1,Sturm A.1,Peters M.1,Johnson S.1,Rassel R.1,Lagerquist M.1,Kerbaugh M.1,Newton K.1,Pekarik J.1,Liu Q.1

Affiliation:

1. GlobalFoundries,Essex Junction,VT,USA,05452

2. GlobalFoundries,Bangalore,KA,India,560045

3. GlobalFoundries,Hopewell Junction,NY,USA,12533

4. GlobalFoundries,Malta,NY,12020

Publisher

IEEE

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Transimpedance Amplifiers with 95 GHz Transimpedance Bandwidth and 1.5% THD for 800G Coherent Optical Communications;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

2. A Highly Efficient, Linear Ka-Band SiGe HBT Cascode Power Amplifier With a Compact Lumped Element Coupled Line Impedance Inverting Balun;IEEE Transactions on Microwave Theory and Techniques;2024

3. Analog/mmWave Circuit Demonstrations in State-of-the-Art SiGe BiCMOS Process for 5G and Optical Transceivers;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

4. Low-Noise Si/SiGe HBT for LEO Satellite User Terminals in Ku-Ka Bands;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

5. Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

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