High-Speed (400MB/s) and Low-BER STT-MRAM Technology for Industrial Applications-Reference-Cited by-同舟云学术

High-Speed (400MB/s) and Low-BER STT-MRAM Technology for Industrial Applications

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Ikegawa S.¹,Nagel K.¹,Mancoff F. B.¹,Alam S. M.¹,Arora M.¹,DeHerrera M.¹,Lee H. K.¹,Mukherjee S.¹,Shimon G.¹,Sun J. J.¹,Rahman I.¹,Neumeyer F.¹,Chou H. Y.¹,Tan Ch.¹,Shah A.¹,Aggarwal S.¹

Affiliation:

1. Everspin Technologies, Inc,Chandler,Arizona,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019513.pdf?arnumber=10019513

Reference7 articles.

1. Demonstration of a Reliable 1 Gb Standalone Spin-Transfer Torque MRAM For Industrial Applications

2. Demonstration of ultra-low voltage and ultra low power STT-MRAM designed for compatibility with 0x node embedded LLC applications;jan;Proc IEEE Symp VLSI Technol,2018

3. Persistent xSPI STT-MRAM with up to 400MB/s Read and Write Throughput

4. Demonstration of narrow switching distributions in STT-MRAM arrays for LLC applications at 1x nm node;edwards;IEDM Tech Dig,2020

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