Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect-Reference-Cited by-同舟云学术

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Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect

Published:2024-05-20 Issue: Volume: Page:1584-1589
ISSN:
Container-title:2024 47th MIPRO ICT and Electronics Convention (MIPRO)
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Author:

Pruckner B.¹,Jørstad N.¹,Hadámek T.¹,Goes W.²,Selberherr S.³,Sverdlov V.¹

Affiliation:

1. Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the

2. Silvaco Europe Ltd., Compass Point, St Ives,Cambridge,United Kingdom,PE27 5JL

3. Institute for Microelectronics, TU Wien, Gußhausstraße 27–29,Wien,Austria,A-1040

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10569139/10569147/10569617.pdf?arnumber=10569617

Reference21 articles.

1. World-most energy-efficient MRAM technology for non-volatile RAM applications

2. High-Speed (400MB/s) and Low-BER STT-MRAM Technology for Industrial Applications

3. Spin-lasers: spintronics beyond magnetoresistance

4. Spin Hall effects

5. Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM

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