World-most energy-efficient MRAM technology for non-volatile RAM applications-Reference-Cited by-同舟云学术

World-most energy-efficient MRAM technology for non-volatile RAM applications

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Lee T. Y.¹,Lee J. M.¹,Kim M. K.¹,Oh J. S.¹,Lee J. W.²,Jeong H. M.¹,Jang P. H.¹,Joo M. K.¹,Suh K.¹,Han S. H.¹,Jeong D.-E.²,Kai T.²,Jeong J. H.²,Park J.-H.²,Lee J. H.²,Park Y. H.¹,Chang E. B.¹,Park Y. K.¹,Shin H. J.¹,Ji Y. S.¹,Hwang S. H.¹,Nam K. T.¹,Kwon B. S.¹,Cho M. K.¹,Seo B. Y.¹,Song Y. J.¹,Koh G. H.¹,Lee K.¹,Lee J.-H.¹,Jeong G. T.¹

Affiliation:

1. Samsung Electronics Co.,Foundry Business,Giheung,Korea

2. Samsung Electronics Co.,R&D center,Hwasung,Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019430.pdf?arnumber=10019430

Reference4 articles.

1. Low RA Magnetic Tunnel Junction Arrays in Conjunction with Low Switching Current and High Breakdown Voltage for STT-MRAM at 10 nm and Beyond

2. A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology;min;IEEE Trans Magn,2010

3. Persistent xSPI STT-MRAM with up to 400MB/s Read and Write Throughput

4. 12.5 Mb/mm2 embedded MRAM for high density non-volatile RAM applications;suh;VLSIT,2021

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