Persistent xSPI STT-MRAM with up to 400MB/s Read and Write Throughput-Reference-Cited by-同舟云学术

Persistent xSPI STT-MRAM with up to 400MB/s Read and Write Throughput

Published:2022-05 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Memory Workshop (IMW)
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Author:

Alam S. M.¹,Houssameddine D.¹,Neumeyer F.¹,Rahman I.¹,DeHerrera M.¹,Ikegawa S.¹,Sanchez P.¹,Zhang X.¹,Wang Y.¹,Williams J.¹,Gogl D.¹,Xu H.¹,Farook M.¹,Aceves D.¹,Lee H. K.¹,Mancoff F. B.¹,Chou M.¹,Tan CH.¹,Huang B.¹,Mukherjee S.¹,Lu M.¹,Shah A.¹,Nagel K.¹,Kim Y.¹,Aggarwal S.¹

Affiliation:

1. Everspin Technologies, Inc.,Chandler,Arizona,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9779263/9779243/09779276.pdf?arnumber=9779276

Reference9 articles.

1. A 4-Mb toggle MRAM based on a novel bit and switching method

2. Commercialization of MRAM – Historical and Future Perspective

3. Expanded Serial Peripheral Interface (xSPI) Industrial STT-MRAM Persistent Memory;EM064LX datasheet,2022

4. 13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference

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4. High-Speed (400MB/s) and Low-BER STT-MRAM Technology for Industrial Applications;2022 International Electron Devices Meeting (IEDM);2022-12-03

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