GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C-Reference-Cited by-同舟云学术

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GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C

Published:2024-06-24 Issue: Volume:4 Page:1-2
ISSN:
Container-title:2024 Device Research Conference (DRC)
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Author:

Luo Shisong¹,Chang Cheng¹,Xie Qingyun²,Li Tao¹,Xu Mingfei¹,He Ziyi³,Palacios Tomás²,Zhao Yuji¹

Affiliation:

1. Rice University,Department of Electrical and Computer Engineering,Houston,TX,USA,77005

2. Massachusetts Institute of Technology,Microsystems Technology Laboratories,Cambridge,MA,USA,02139

3. Arizona State University,School of Electrical, Computer, and Energy Engineering,Tempe,AZ,USA,85287

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10605129/10605242/10605554.pdf?arnumber=10605554

Reference14 articles.

1. Gallium nitride-based complementary logic integrated circuits

2. An Experimental Demonstration of GaN CMOS Technology

3. High Threshold Voltage Stability Enhancement-Mode GaN p-FETs Fabricated With PEALD-AlN Gate Interfacial Layer

4. p-GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications

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