High Threshold Voltage Stability Enhancement-Mode GaN <i>p</i>-FETs Fabricated With PEALD-AlN Gate Interfacial Layer-Reference-Cited by-同舟云学术

High Threshold Voltage Stability Enhancement-Mode GaN p-FETs Fabricated With PEALD-AlN Gate Interfacial Layer

Published:2024-03 Issue:3 Volume:45 Page:320-323
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Liu¹^ORCID,Huang Sen¹^ORCID,Jiang Qimeng¹^ORCID,Wang Xinhua¹^ORCID,Wang Yingjie¹,Yao Yixu¹^ORCID,Shi Jingyuan¹,Fan Jie¹,Yin Haibo¹,Wei Ke¹,Liu Xinyu¹^ORCID

Affiliation:

1. High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center, Institute of Microelectronics, Chinese Academy of Sciences, Beiiing, China

Funder

National Key Research and Development Program of China

Youth Innovation Promotion Association of the Chinese Academy Sciences

CAS-Croucher Funding Scheme

National Natural Science Foundation of China

Beijing Municipal Science and Technology Commission Project

University of CAS

Institute of Microelectronics of the Chinese Academy of Sciences and Hong Kong University of Science and Technology (IMECAS-HKUST)-Joint Laboratory of Microelectronics

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10449685/10401223.pdf?arnumber=10401223

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2. Increasing the switching frequency of GaN HFET converters

3. Planar GaN Power Integration – The World is Flat

4. Monolithic GaN Power IC Technology Drives Wide Bandgap Adoption

5. Gallium nitride-based complementary logic integrated circuits

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