Affiliation:
1. The Hong Kong University of Science and Technology Shenzhen Research Institute 1 , Shenzhen 518000, China
2. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology 2 , Clear Water Bay, Hong Kong, China
Abstract
In this work, we manifest that the epitaxial structure for p-GaN gate high-electron-mobility transistor is a versatile platform to develop electronics for operating in an extremely wide temperature range (X-WTR) from 2 to 675 K, with comprehensive X-WTR studies on device operation and circuit behaviors. The key enabler for the high-temperature operation is the wide bandgap that substantially suppresses the thermal excitation of the intrinsic carrier. However, for the low-temperature side, the two-dimensional electron and hole gas (2DEG and 2DHG) channels at the heterojunctions are formed by the temperature-insensitive polarization fields, which free the carriers from freezing out. The monolithically integrated GaN n-FET, p-FET, and the resultant complementary circuits are, therefore, shown to operate in X-WTR.
Funder
National Key Research and Development Program of China
Croucher Foundation
Subject
Physics and Astronomy (miscellaneous)