Cu-Cu Direct Bonding Through Highly Oriented Cu Grains for 3D-LSI Applications
Author:
Affiliation:
1. GINTI, NICHe, Tohoku Univ.,Sendai,Japan
2. JCU Corporation,Japan
3. T-Micro,Sendai,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9687597/9687598/09687604.pdf?arnumber=9687604
Reference15 articles.
1. A Novel Low-Temperature Cu-Cu Direct Bonding with Cr Wetting Layer and Au Passivation Layer
2. Room temperature direct Cu-Cu bonding with ultrafine pitch Cu pads
3. Sub-micron aligned Cu-Cu direct bonding for TSV stacking
4. Cu Microstructure of High Density Cu Hybrid Bonding Interconnection
5. Low-temperature Cu-to-Cu direct bonding enabled by highly (111)- oriented and nanotwinned Cu
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