Cu-SiO<sub>2</sub> Hybrid Bonding Yield Enhancement Through Cu Grain Enlargement-Reference-Cited by-同舟云学术

Cu-SiO₂ Hybrid Bonding Yield Enhancement Through Cu Grain Enlargement

Published:2022-05 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)
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Author:

Murugesan M.¹,Mori K.²,Sawa M.³,Sone E.³,Koyanagi M.⁴,Fukushima T.¹

Affiliation:

1. Tohoku University,Japan

2. T-Micro,Japan

3. JCU Corporation,Japan

4. T-Mirco,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9816066/9816372/09816411.pdf?arnumber=9816411

Reference19 articles.

1. Sub-micron aligned Cu-Cu direct bonding for TSV stacking;ki;2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC),2010

2. Feasibility study on ultrafine-pitch Cu-Cu bonding using directed self-assembly (DSA)

3. Demonstration of Low-Temperature Fine-Pitch Cu/SiO₂ Hybrid Bonding by Au Passivation

4. Hybrid Bonding Interconnect for Advanced Heterogeneously Integrated Process;elsherbini;71th Electronic Components and Technology Conference (ECTC),2021

5. Enabling D2W / D2D Hybrid Bonding on manufacturing equipment based on simulated process parameters

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