A Simple Spacer Technique to Fabricate Poly-Si TFTs With 50-nm Nanowire Channels-Reference-Cited by-同舟云学术

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A Simple Spacer Technique to Fabricate Poly-Si TFTs With 50-nm Nanowire Channels

Published:2007-11 Issue:11 Volume:28 Page:993-995
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chang Chia-Wen,Deng Chih-Kang,Chang Hong-Ren,Chang Che-Lun,Lei Tan-Fu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4367538/04367541.pdf?arnumber=4367541

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Poly-Si Thin-Film Transistors with N-Type Line-Array Doping Channels Fabricated by Nanoimprint Lithography;ECS Journal of Solid State Science and Technology;2019

2. Metallic Schottky barrier source/drain nanowire transistors using low-temperature microwave annealed nickel, ytterbium, and titanium silicidation;Materials Science in Semiconductor Processing;2017-11

3. Ultra-high aspect ratio poly-Si FinFET using an improved spacer formation technique;Superlattices and Microstructures;2017-04

4. Technology demonstration of a novel poly-Si nanowire thin film transistor;Chinese Physics B;2016-11

5. Potential barrier height at the grain boundaries of a poly-silicon nanowire;Nanotechnology;2015-08-06

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