Poly-Si Thin-Film Transistors with N-Type Line-Array Doping Channels Fabricated by Nanoimprint Lithography-Reference-Cited by-同舟云学术

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Poly-Si Thin-Film Transistors with N-Type Line-Array Doping Channels Fabricated by Nanoimprint Lithography

Published:2019 Issue:8 Volume:8 Page:Q158-Q163
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Chen Henry J. H.^ORCID,Huang Pin Tun,Lee Tzu Nien

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Novel voltage programming n-channel TFT pixel circuit for low power and high performance AMOLED displays

2. Low-Voltage Driven P-Type Polycrystalline Silicon Thin-Film Transistor Integrated Gate Driver Circuits for Low-Cost Chip-on-Glass Panel

3. Gate-induced drain leakage current characteristics of p-type polycrystalline silicon thin film transistors aged by off-state stress

4. Effects of Channel Type and Doping on Hysteresis in Low-Temperature Poly-Si Thin-Film Transistors

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