Potential barrier height at the grain boundaries of a poly-silicon nanowire-Reference-Cited by-同舟云学术

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Potential barrier height at the grain boundaries of a poly-silicon nanowire

Published:2015-08-06 Issue:35 Volume:26 Page:355201
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Shamir Assaf,Amit Iddo,Englander Danny,Horvitz Dror,Rosenwaks Yossi

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/26/i=35/a=355201/pdf

Reference22 articles.

1. Poly-silicon nanowire field-effect transistor for ultrasensitive and label-free detection of pathogenic avian influenza DNA

2. Label-free immunodetection with CMOS-compatible semiconducting nanowires

3. Silicon Nanowire Arrays for Label-Free Detection of DNA

4. Label-free biosensing of a gene mutation using a silicon nanowire field-effect transistor

5. Nanowire nanosensors

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1. POTENTIAL BARRIER ESTIMATION WITH A GRAPHICAL METHOD;Materiali in tehnologije;2023-01-25

2. Random Telegraph Noise in Flash Memories;Noise in Nanoscale Semiconductor Devices;2020

3. Variation of poly-Si grain structures under thermal annealing and its effect on the performance of TiN/Al2O3/Si3N4/SiO2/poly-Si capacitors;Applied Surface Science;2019-05

4. Threshold Voltage Shift Variation of Vertical NAND Flash Memory Devices Dependent on Polysilicon Channel Layer Thickness;Journal of Nanoscience and Nanotechnology;2017-10-01

5. Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices;Computers;2017-04-21

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