Author:
Kobayashi Kevin W.,Kumar Vipan,Campbell Charles,Chen Shuoqi,Cao Yu
Cited by
11 articles.
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1. Broadband Low-Noise Ka-Band Front-End MMIC in a 0.15-µm GaN-on-SiC HEMT Technology;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
2. Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
3. A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications;IEEE Journal of Microwaves;2023-10
4. On the Survivability of a 28 - 32 GHz GaN Low Noise Amplifier;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
5. A 23 – 32 GHz LNA with Near 5 W Power Handling Capability Using 180 nm GaN HEMT Technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18