A 23 – 32 GHz LNA with Near 5 W Power Handling Capability Using 180 nm GaN HEMT Technology
Author:
Affiliation:
1. Air Force Research Laboratory Sensors Directorate,USA
2. Michigan State University,Department of Electrical and Computer Engineering,USA
3. Electromagnetic Sensor Technologies, Inc.,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288583/10288635/10288986.pdf?arnumber=10288986
Reference15 articles.
1. DC Power-Optimized Ka-Band GaN-on-Si Low-Noise Amplifier With 1.5 dB Noise Figure
2. 18-44GHz K/Ka-band Robust-35.5dBm Reconfigurable 90nm GaN HEMT LNA
3. A new noise parameter measurement method results in more than 100x speed improvement and enhanced measurement accuracy
4. Robust GaN-Based LNAs With Active Epitaxial Current Limiters
5. A 23–31 GHz Robust Low-Noise Amplifier with 1.1 dB Noise Figure and 28 dBm Psat
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