A Highly-Efficient 120 GHz and 240 GHz Signal Source in A SiGe-Technology-Reference-Cited by-同舟云学术

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A Highly-Efficient 120 GHz and 240 GHz Signal Source in A SiGe-Technology

Published:2020-11-16 Issue: Volume: Page:
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Container-title:2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Vogelsang Florian,Starke David,Wittemeier Jonathan,Rucker Holger,Pohl Nils

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9392908/9392902/09392945.pdf?arnumber=9392945

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 360 GHz Fully Integrated Differential Signal Source With 106.7 GHz Continuous Tuning Range in 90 nm SiGe:C BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2024-08

2. A compact and fully integrated FMCW radar transceiver combined with a dielectric lens;International Journal of Microwave and Wireless Technologies;2023-12-06

3. Ultra-Wideband Signal Source Tuneable From 86 GHz to 142 GHz in SiGe Technology;2023 Sixth International Workshop on Mobile Terahertz Systems (IWMTS);2023-07-03

4. Fully Differential 90 GHz and 180 GHz Signal Sources With Tuning Ranges of 24.1 GHz and 51.7 GHz in 90 nm SiGe-BiCMOS;2023 Sixth International Workshop on Mobile Terahertz Systems (IWMTS);2023-07-03

5. Compact and Digitally Controlled D-Band Vector Modulator for Next-Gen Radar Applications in 130 nm SiGe BiCMOS;IEEE Journal of Microwaves;2023-04

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