Fully Differential 90 GHz and 180 GHz Signal Sources With Tuning Ranges of 24.1 GHz and 51.7 GHz in 90 nm SiGe-BiCMOS
Author:
Affiliation:
1. Ruhr University Bochum,Institute of Integrated Systems,Bochum,Germany
2. Fraunhofer FHR Fraunhofer Institute for High Frequency Physics and Radar Techniques FHR,Wachtberg,Germany
3. Infineon Technologies AG,Neubiberg,Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10207846/10207778/10207849.pdf?arnumber=10207849
Reference22 articles.
1. SiGe Bipolar VCO With Ultra-Wide Tuning Range at 80 GHz Center Frequency
2. A Highly-Efficient 120 GHz and 240 GHz Signal Source in A SiGe-Technology
3. 90–140 GHz frequency octupler in Si/SiGe BiCMOS using a novel bootstrapped doubler topology
4. A 117 GHz Dual-Modulus Prescaler With Inductive Peaking for a Programmable Frequency Divider
5. A 169.6 GHz Hybrid Mode-Switching Push-Push Oscillator with 21.7% Tuning Range and 180.6dBc/Hz FoMT in 28nm CMOS Technology
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A 360 GHz Fully Integrated Differential Signal Source With 106.7 GHz Continuous Tuning Range in 90 nm SiGe:C BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2024-08
2. Ultra-Wideband Transceiver MMIC Tuneable From 74.1 GHz to 147.8 GHz in SiGe Technology;IEEE Journal of Microwaves;2024-07
3. A 335–407-GHz SiGe-Based Subharmonic Mixer Using a Fully Integrated LO Generation;IEEE Microwave and Wireless Technology Letters;2024-06
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