A D-band Variable-Gain LNA with Triple-inductive Coupling Gm-boosting
Author:
Affiliation:
1. KAIST,Department of Electrical Engineering,Daejeon,Republic of Korea
2. LIG Nex1 Co. Ltd,Yongin,Republic of Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9882303/9882341/09882404.pdf?arnumber=9882404
Reference8 articles.
1. A 40-GHz 4-Bit Digitally Controlled VGA With Low Phase Variation Using 65-nm CMOS Process
2. A Wideband Variable Gain LNA With High OIP3 for 5G Using 40-nm Bulk CMOS
3. A 125.5-157 GHz 8 dB NF and 16 dB of Gain D-band Low Noise Amplifier in CMOS SOI 45 nm
4. A K-Band Dual-Mode Common Gate Cross-Summing VG-LNA With Low Phase Variation
5. A 134-149 GHz IF Beamforming Phased-Array Receiver Channel with 6.4-7.5 dB NF Using CMOS 45nm RFSOI
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1. A 52–73-GHz LNA With Tri-Coupled Transformer for G m Boosting and Enhanced Noise Canceling;IEEE Journal of Solid-State Circuits;2024-03
2. Realizing Joint Communication and Sensing RF Receiver Front-Ends: A Survey;IEEE Access;2024
3. A D-Band Variable Gain Low Noise Amplifier in a 28-nm CMOS Process for 6G Wireless Communications;IEEE Transactions on Circuits and Systems II: Express Briefs;2024-01
4. A Compact 120 GHz LNA in 22 nm FD-SOI with Back-Gate Controllable Variable-Gain;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
5. On-Wafer Measurement of a D-Band Device;The Journal of Korean Institute of Electromagnetic Engineering and Science;2023-01
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