A 125.5-157 GHz 8 dB NF and 16 dB of Gain D-band Low Noise Amplifier in CMOS SOI 45 nm
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/9212188/9223768/09224114.pdf?arnumber=9224114
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis and Design of a Novel Gain-Boosting Technique Based on Lossy Series Embedding Network for Near-fmax Embedded Amplifier;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-02
2. A 131–162-GHz Wideband CMOS LNA Using Asymmetric Frequency Responses of Triple-Coupled Transformers;IEEE Microwave and Wireless Technology Letters;2023-11
3. A D-band Low-Noise Amplifier in 28-nm CMOS Technology for Radio Astronomy Applications;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
4. MOSFET Layout Design for High-Gain Amplifiers at mm-Wave and Sub-Terahertz;IEEE Microwave and Wireless Technology Letters;2023-08
5. A 115.7–139.7 GHz Amplifier with 19.7 dB Peak Gain and 7.9 dB NF in 40-nm CMOS;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11
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