A D-band Low-Noise Amplifier in 28-nm CMOS Technology for Radio Astronomy Applications
Author:
Affiliation:
1. National Taiwan University,Dept. of Electrical Engineering and Graduate Institute of Communication Engineering,Taiwan
2. Institute of Astronomy and Astrophysics, Academia Sinica,Taiwan
Funder
Taiwan Semiconductor Manufacturing Company
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288583/10288635/10288999.pdf?arnumber=10288999
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4. A 125.5-157 GHz 8 dB NF and 16 dB of Gain D-band Low Noise Amplifier in CMOS SOI 45 nm
5. A 102–129-GHz 39-dB Gain 8.4-dB Noise Figure I/Q Receiver Frontend in 28-nm CMOS
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2. Design of a W-Band Transformer-Based Switchless Bidirectional PALNA in 65-nm CMOS Process;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
3. D-Band Low-Noise Differential Amplifier in a 40-nm CMOS;The Journal of Korean Institute of Electromagnetic Engineering and Science;2024-04
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