D-Band Low-Noise Differential Amplifier in a 40-nm CMOS
Author:
Funder
Ministry of Science and ICT, South Korea
Publisher
Korean Institute of Electromagnetic Engineering and Science
Link
http://jkiees.org/download/download_pdf?doi=10.5515/KJKIEES.2024.35.4.303
Reference8 articles.
1. H. S. Chen, J. Y. C. Liu, "A 180-GHz low-noise amplifier with recursive Z-embedding technique in 40-nm CMOS," IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 69, no. 12, pp. 4649-4653, Dec. 2022. 10.1109/TCSII.2022.3181702
2. L. J. Huang, C. C. Chiong, Y. S. Wang, H. Wang, T. W. Huang, and C. C. Chien, "A D-band low-noise amplifier in 28-nm CMOS technology for radio astronomy applications," in 2023 18th European Microwave Integrated Circuits Conference(EuMIC), Berlin, Sep. 2023, pp. 369-372. 10.23919/EuMIC58042.2023.10288999
3. A. H. Kazemi, M. Hayat, "Design and analysis of a flat gain and linear low noise amplifier using modified current reused structure with feedforward structure," Integration, vol. 81, pp. 123-136, Nov. 2021. 10.1016/j.vlsi.2021.05.013
4. C. J. Liang, C. W. Chiang, J. Zhou, R. Huang, K. A. Wen, and M. C. F. Chang, et al., "A 0.6-V VDD W-band neutralized differential low noise amplifier in 28-nm bulk CMOS," IEEE Microwave and Wireless Components Letters, vol. 31, no. 5, pp. 481-484, May 2021. 10.1109/LMWC.2021.3062027
5. K. Kim, J. Kang, K. Lee, S. U. Choi, J. Kim, and H. J. Song, "A 115.7~139.7 GHz amplifier with 19.7 dB peak gain and 7.9 dB NF in 40-nm CMOS," in 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023, San Diego, CA, Jun. 2023, pp. 48-51.
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