Author:
Larkoski Patricia V.,Kangaslahti Pekka,Samoska Lorene,Lai Richard,Sarkozy Stephen,Church Sarah E.
Cited by
8 articles.
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1. Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications;IEEE Transactions on Nanotechnology;2024
2. The Full D-Band InP HEMT Low Noise Amplifiers MMIC with 2.7dB Noise Factor;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13
3. A D-band Low-Noise Amplifier in 28-nm CMOS Technology for Radio Astronomy Applications;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
4. A W-Band Low-Noise Amplifier in 50-nm InP HEMT Technology;2023 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS);2023-04-19
5. 6G Roadmap for Semiconductor Technologies: Challenges and Advances;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03