A Wideband Variable Gain LNA With High OIP3 for 5G Using 40-nm Bulk CMOS-Reference-Cited by-同舟云学术

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A Wideband Variable Gain LNA With High OIP3 for 5G Using 40-nm Bulk CMOS

Published:2018-01 Issue:1 Volume:28 Page:64-66
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Elkholy Mohamed^ORCID,Shakib Sherif^ORCID,Dunworth Jeremy^ORCID,Aparin Vladimir,Entesari Kamran^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/8249514/08226837.pdf?arnumber=8226837

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4. A 22–33-GHz G_m -Boosting Low-Power Noise-Canceling LNA in 40-nm CMOS Process;IEEE Transactions on Microwave Theory and Techniques;2024-07

5. A 31–36 GHz low noise‐variable gain amplifier with less than 0.37° RMS phase error and 0.4 dB gain step in 65‐nm CMOS;Microwave and Optical Technology Letters;2024-06-29

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