Enabling technologies for wafer-level bonding of 3D MEMS and integrated circuit structures-Reference-Cited by-同舟云学术

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Enabling technologies for wafer-level bonding of 3D MEMS and integrated circuit structures

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Container-title:2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE Cat. No.04CH37546)
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Author:

Topol A.W.,Furman B.K.,Guarini K.W.,Shi L.,Cohen G.M.,Walker G.F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9210/29234/01319449.pdf?arnumber=1319449

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review: wafer bonding of Si-based semiconductors;Journal of Physics D: Applied Physics;2020-06-09

2. Adhesion and Material Properties Between Polyimide and Passivation Layers for Polymer/Metal Hybrid Bonding in 3-D Integration;IEEE Transactions on Components, Packaging and Manufacturing Technology;2019-03

3. Cu/Adhesive Hybrid Bonding at 180 °C in H-Containing HCOOH Vapor Ambient for 2.5D/3D Integration;2017 IEEE 67th Electronic Components and Technology Conference (ECTC);2017-05

4. A novel cavity-first process for flexible fabrication of MEMS on silicon on insulator (SOI) wafer;Microelectronic Engineering;2014-05

5. Cavity‐first approach for microelectromechanical system–CMOS monolithic integration;Micro & Nano Letters;2013-10

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