Advancing 2D Monolayer CMOS Through Contact, Channel and Interface Engineering-Reference-Cited by-同舟云学术

Advancing 2D Monolayer CMOS Through Contact, Channel and Interface Engineering

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

O'Brien K. P.¹,Dorow C. J.¹,Penumatcha A.¹,Maxey K.¹,Lee S.¹,Naylor C. H.¹,Hsiao A.¹,Holybee B.¹,Rogan C.¹,Adams D.¹,Tronic T.¹,Ma S.²,Oni A.³,Gupta A. Sen¹,Bristol R.¹,Clendenning S.¹,Metz M.¹,Avci U.¹

Affiliation:

1. Intel Corporation,Components Research,Hillsboro,OR,USA,97214

2. Intel Corporation,Global Supply Chain,Hillsboro,OR,USA,97214

3. Intel Corporation,Quality and Reliablity,Hillsboro,OR,USA,97214

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720651.pdf?arnumber=9720651

Reference15 articles.

1. Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates

2. Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides

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