Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS2 Transistor Operating in Subthreshold Regime

Author:

Yang Eunyeong1,Hong Sekwon1,Ma Jiwon1,Park Sang-Joon2,Lee Dae Kyu3,Das Tanmoy4ORCID,Ha Tae-Jun2ORCID,Kwak Joon Young5ORCID,Chang Jiwon167ORCID

Affiliation:

1. Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea

2. Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, South Korea

3. Korea Institute of Science and Technology, KIST, Seoul 02792, South Korea

4. Faculty of Engineering, Lincoln University College, Petaling Jaya, Selangor 47301, Malaysia

5. Division of Electronic and Semiconductor Engineering, Ewha Womans University, Seoul 03760, South Korea

6. Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, South Korea

7. BK21 Graduate Program in Intelligent Semiconductor Technology, Seoul 03722, South Korea

Funder

Kwangwoon University

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

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