Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides-Reference-Cited by-同舟云学术

Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides

Published:2019-02-14 Issue:9 Volume:123 Page:5411-5420
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Sotthewes Kai¹²^ORCID,van Bremen Rik¹,Dollekamp Edwin¹^ORCID,Boulogne Tim¹,Nowakowski Krystian¹,Kas Daan¹,Zandvliet Harold J. W.¹,Bampoulis Pantelis¹^ORCID

Affiliation:

1. Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands

2. II. Institute of Physics B and JARA-FIT, RWTH-Aachen University, 52056 Aachen, Germany

Funder

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b10971

Reference79 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

3. Emerging Photoluminescence in Monolayer MoS2

4. Stacking effects on the electronic and optical properties of bilayer transition metal dichalcogenidesMoS2,MoSe2,WS2, andWSe2

5. Engineering electronic properties of layered transition-metal dichalcogenide compounds through alloying

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