Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration-Reference-Cited by-同舟云学术

Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration

Published:2021-12-11 Issue: Volume: Page:
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Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Then Han Wui¹,Radosavljevic M.¹,Koirala P.¹,Thomas N.¹,Nair N.¹,Ban I.¹,Talukdar T.¹,Nordeen P.¹,Ghosh S.¹,Bader S.¹,Hoff T.¹,Michaelos T.¹,Nahm R.¹,Beumer M.¹,Desai N.¹,Wallace P.¹,Hadagali V.¹,Vora H.¹,Oni A.¹,Weng X.¹,Joshi K.¹,Meric I.¹,Nieva C.¹,Rami S.¹,Fischer P.¹

Affiliation:

1. Intel Corporation,Components Research,Hillsboro,OR,USA,97124

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720710.pdf?arnumber=9720710

Reference13 articles.

1. 94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

2. GaN FinFETs and trigate devices for power and RF applications: review and perspective

3. Design of ion-implanted MOSFET's with very small physical dimensions

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