Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE

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Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE > 62% at 28 GHz

Published:2024-06-16 Issue: Volume: Page:948-951
ISSN:
Container-title:2024 IEEE/MTT-S International Microwave Symposium - IMS 2024
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Author:

ElKashlan Rana¹,Yadav Sachin¹,Khaled Ahmad¹,Xiao Dongping¹,Kazemi Babak¹,Yu Hao¹,Alian AliReza¹,Peralagu Uthayasankaran¹,Collaert Nadine¹,Parvais Bertrand¹

Affiliation:

1. imec,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10600173/10600174/10600314.pdf?arnumber=10600314

Reference17 articles.

1. Towards a Si foundry-compatible GaN-on-Si MMIC process on 200mm Si with Cu damascene BEOL (Conference Presentation)

2. Power Amplifiers Performance Survey 2000-Present;Wang

3. Reliability and parasitic issues in GaN-based power HEMTs: a review

4. Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier

5. Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions

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