Multi-Channel Monolithic-Cascode HEMT (MC<sup>2</sup>-HEMT): A New GaN Power Switch up to 10 kV-Reference-Cited by-同舟云学术

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Multi-Channel Monolithic-Cascode HEMT (MC²-HEMT): A New GaN Power Switch up to 10 kV

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Xiao M.¹,Ma Y.¹,Du Z.²,Pathirana V.³,Cheng K.⁴,Xie A.⁵,Beam E.⁵,Cao Y.⁵,Udrea F.³,Wang H.²,Zhang Y.¹

Affiliation:

1. Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University,Blacksburg,VA,USA

2. University of Southern California,Ming Hsieh Department of Electrical and Computer Engineering,Los Angeles,CA,USA

3. University of Cambridge,Department of Engineering,Cambridge,UK

4. Enkris Semiconductor, Inc.,Suzhou,Jiangsu,China

5. Qorvo, Inc.,Richardson,TX,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720714.pdf?arnumber=9720714

Reference17 articles.

1. 3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

2. 10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

3. Multi-channel nanowire devices for efficient power conversion

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN;IEEE Transactions on Electron Devices;2024-09

2. Report of GaN HEMTs on 8-in Sapphire;IEEE Transactions on Electron Devices;2024-07

3. Physics-based Compact Model for Multi-channel AlGaN/GaN Schottky Barrier Diodes;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

4. Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications;IEEE Transactions on Electron Devices;2024-06

5. 1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates;IEEE Electron Device Letters;2024-04

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