1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates-Reference-Cited by-同舟云学术

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1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates

Published:2024-04 Issue:4 Volume:45 Page:657-660
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kumar S.¹^ORCID,Geens K.¹^ORCID,Vohra A.¹^ORCID,Wellekens D.¹^ORCID,Cingu D.¹^ORCID,Fabris E.¹^ORCID,Cosnier T.¹,Hahn H.²^ORCID,Bakeroot B.¹^ORCID,Posthuma N.¹^ORCID,Langer R.¹,Decoutere S.¹^ORCID

Affiliation:

1. IMEC, Leuven, Belgium

2. Aixtron SE, Herzogenrath, Germany

Funder

ALL2GAN

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10479122/10418228.pdf?arnumber=10418228

Reference12 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. 1200V GaN Switches on Sapphire: A low-cost, high-performance platform for EV and industrial applications

3. 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

4. Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices

5. 1.7 kV/1.0 mΩcm2normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Industry perspective on power electronics for electric vehicles;Nature Reviews Electrical Engineering;2024-06-06

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