A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage-Reference-Cited by-同舟云学术

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A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
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Author:

Ali T.,Olivo R.,Lederer M.,Hoffmann R.,Steinke P.,Zimmermann K.,Muhle U.,Seidel K.,Muller J.,Polakowski P.,Kuhnel K.,Czernohorsky M.,Kampfe T.,Rudolph M.,Patzold B.,Lehninger D.,Muller F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993642.pdf?arnumber=8993642

Cited by 92 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-Depth Understanding of Nitridation-Induced Endurance Enhancement in FeFETs: Defect Properties and Dynamics Characterized by Nonradiative Multi-Phonon Model;IEEE Transactions on Electron Devices;2024-09

2. Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO₂;IEEE Transactions on Electron Devices;2024-08

3. Polarization fatigue mechanism of laminated hafnium zirconium oxide ferroelectric thin films;Acta Materialia;2024-06

4. Demonstration of bias scheme for ferroelectric field-effect transistor (FeFET) based AND array operation;Solid-State Electronics;2024-06

5. Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications;Chip;2024-06

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