GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion-Reference-Cited by-同舟云学术

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GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
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Author:

Li X.,Stoffels S.,Bakeroot B.,Wellekens D.,Vanhove B.,Cosnier T.,Langer R.,Marcon D.,Groeseneken G.,Decoutere S.,Amirifar N.,Geens K.,Zhao M.,Guo W.,Liang H.,You S.,Posthuma N.,Jaeger B. De

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993572.pdf?arnumber=8993572

Cited by 58 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode;IEEE Transactions on Electron Devices;2024-08

2. p-GaN Gate HEMTs on 6-Inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics;IEEE Electron Device Letters;2024-07

3. CMOS Compatible Cost-Effective eGaN HEMT Using B-Doped Schottky Barrier Gate on Compliant SOI Substrates;2024 14th International Conference on Electrical Engineering (ICEENG);2024-05-21

4. Overshoot Prevention in Monolithic GaN by Ultra-Low ESL Gate Loop Design Using Chip-Scale Capacitors and Gate Driver Pull-Up Path Tuning Technique;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

5. A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits;Electronics;2024-02-10

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