Multiple-Vt Solutions in Nanosheet Technology for High Performance and Low Power Applications-Reference-Cited by-同舟云学术

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Multiple-Vt Solutions in Nanosheet Technology for High Performance and Low Power Applications

Published:2019-12 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Electron Devices Meeting (IEDM)
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Author:

Bao R.,Watanabe K.,Zhang J.,Guo J.,Zhou H.,Gaul A.,Sankarapandian M.,Li J.,Hubbard A. R.,Vega R.,Pancharatnam S.,Jamison P.,Wang M.,Loubet N.,Basker V.,Dechene D.,Guo D.,Haran B.,Bu H.,Khare M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8971803/8993428/08993480.pdf?arnumber=8993480

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects;IEEE Transactions on Electron Devices;2024-04

3. Multi-V_T Options at Scaled Vertical Pitch in Gate-All-Around Nanosheet Devices by Independent Inner-Outer Work-function Tuning;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

4. Sub-5-Å La₂O₃ In Situ Dipole Technique for Large V_FB Modulation With EOT Reduction and Improved Interface for HKMG Technology;IEEE Transactions on Electron Devices;2024-01

5. Investigation of Electrothermal Characteristics in Silicon Forksheet FETs for Sub-3-nm Node;IEEE Transactions on Electron Devices;2023-12

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