Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects-Reference-Cited by-同舟云学术

Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects

Published:2024-04 Issue:4 Volume:71 Page:2271-2277
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yao Ching-Wang¹,Lee Yu-Chieh²^ORCID,Lin Hsin-Cheng²^ORCID,Chou Tao¹^ORCID,Chung Tsai-Yu²,Wang Li-Kai³,Yang Jen-Wei²,Jan Sun-Rong²,Liu C. W.⁴^ORCID

Affiliation:

1. Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan

2. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan

3. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan

4. Department of Electrical Engineering, Graduate Institute of Electronics Engineering, Graduate Institute of Photonics and Optoelectronics, Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan

Funder

National Science and Technology Council, Taiwan

Ministry of Education, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10482422/10439058.pdf?arnumber=10439058

Reference53 articles.

1. Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

2. 3 nm GAA technology featuring multi-bridge-channel FET for low power and high performance applications;Bae

3. Self-Heating Induced Interchannel Vt Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs

4. Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires

5. Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node

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