Strategies for parameter extraction of the time constant distribution of time-dependent variability models for nanometer-scale devices-Reference-Cited by-同舟云学术

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Strategies for parameter extraction of the time constant distribution of time-dependent variability models for nanometer-scale devices

Published:2023-07-03 Issue: Volume: Page:
ISSN:
Container-title:2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)
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Author:

Fernandez F.V.¹,Roca E.¹,Sarazá P.²,Martin-Martinez J.³,Rodriguez R.³,Nafria M.³,Castro-Lopez R.¹

Affiliation:

1. IMSE-CNM (CSIC and Universidad de Sevilla),Instituto de Microelectrónica de Sevilla,Sevilla,Spain

2. IMEC,Leuven,Belgium

3. Universitat Autònoma de Barcelona (UAB),Electronic Engineering Department (REDEC) group,Barcelona,Spain

Funder

Junta de Andalucía

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10192100/10192102/10192206.pdf?arnumber=10192206

Reference8 articles.

1. The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress

2. Determination of the Time Constant Distribution of a Defect-Centric Time-Dependent Variability Model for Sub-100-nm FETs

3. A Versatile CMOS Transistor Array IC for the Statistical Characterization of Time-Zero Variability, RTN, BTI, and HCI

4. Probabilistic defect occupancy model for NBTI

5. A robust and automated methodology for the analysis of Time-Dependent Variability at transistor level

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