Probabilistic defect occupancy model for NBTI
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/5776767/5784429/05784605.pdf?arnumber=5784605
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1. Random Telegraph Noise and Bias Temperature Instabilities statistical characterization of Ω-gate FDSOI devices at low voltages;Solid-State Electronics;2023-11
2. Strategies for parameter extraction of the time constant distribution of time-dependent variability models for nanometer-scale devices;2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD);2023-07-03
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5. Towards Complete Recovery of Circuit Degradation by Annealing With On-Chip Heaters;IEEE Electron Device Letters;2023-02
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