Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variability
Author:
Affiliation:
1. Universitat Autonoma Barcelona,Department of Electronic Engineering,Bellaterra,Spain,08193
2. Instituto de Microelectrónica de Sevilla, (Universidad de Sevilla and CSIC),Seville,Spain,41092
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118334.pdf?arnumber=10118334
Reference38 articles.
1. A Comparative Study of Different Physics-Based NBTI Models
2. Defect-centric perspective of combined BTI and RTN time-dependent variability
3. A unified perspective of RTN and BTI
4. Determination of the Time Constant Distribution of a Defect-Centric Time-Dependent Variability Model for Sub-100-nm FETs
5. Predictive Hot-Carrier Modeling of n-Channel MOSFETs
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1. High-Throughput Addressable Test Structure Design for Nano-Scaled CMOS Device Characterization;IEEE Transactions on Circuits and Systems II: Express Briefs;2024-09
2. Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
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