A robust and automated methodology for the analysis of Time-Dependent Variability at transistor level-Reference-Cited by-同舟云学术

A robust and automated methodology for the analysis of Time-Dependent Variability at transistor level

Published:2020-05 Issue: Volume:72 Page:13-20
ISSN:0167-9260
Container-title:Integration
language:en
Short-container-title:Integration

Author:

Saraza-Canflanca P.,Diaz-Fortuny J.,Castro-Lopez R.,Roca E.,Martin-Martinez J.,Rodriguez R.,Nafria M.,Fernandez F.V.

Funder

AEI

FEDER

MINECO

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Software

Reference27 articles.

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3. Origin of NBTI variability in deeply scaled pFETS;Kaczer;Proceedings of International Reliability Physics Symposium,2010

4. Hot carrier injection stress effect on a 65 nm LNA at 70 GHz;Yuan;IEEE Trans. Device Mater. Reliab.,2014

5. Degradation of time dependent variability due to interface state generation;Toledano-Luque,2013

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